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d a t a sh eet product speci?cation supersedes data of 2003 nov 26 2004 may 19 integrated circuits 74hc2g66; 74hct2g66 bilateral switches
2004 may 19 2 philips semiconductors product speci?cation bilateral switches 74hc2g66; 74hct2g66 features wide supply voltage range from 2.0 v to 9.0 v very low on-resistance: C41 w (typical) at v cc = 4.5 v C30 w (typical) at v cc = 6.0 v C21 w (typical) at v cc = 9.0 v. high noise immunity low power dissipation 25 ma switch current sot505-2 package esd protection: hbm eia/jesd22-a114-a exceeds 2000 v mm eia/jesd22-a115-a exceeds 200 v. specified from - 40 c to +85 c and - 40 c to +125 c. description the 74hc2g66/74hct2g66 is a high-speed si-gate cmos device. the 74hc2g66/74hct2g66 provides a dual analog switch. each switch has two pins (ny and nz) for input or output and an active high enable input (pin e). when pin e is low, the belonging analog switch is turned off. quick reference data gnd = 0 v; t amb =25 c; t r =t f = 6.0 ns; v os is the output voltage at pins ny or nz, whichever is assigned as an output. notes 1. c pd is used to determine the dynamic power dissipation (p d in m w). p d =c pd v cc 2 f i +(c l +c s ) v cc 2 f o ) where: f i = input frequency in mhz; f o = output frequency in mhz; c l = output load capacitance in pf; c s = switch capacitance in pf; v cc = supply voltage in volts. 2. for 74hc2g66 the condition is v i = gnd to v cc . for 74hct2g66 the condition is v i = gnd to v cc - 1.5 v. symbol parameter conditions typical unit hc2g hct2g t pzh /t pzl turn-on time ne to v os c l = 50 pf; r l =1k w ;v cc = 4.5 v 12 13 ns t phz /t plz turn-off time ne to v os c l = 50 pf; r l =1k w ;v cc = 4.5 v 12 13 ns c i input capacitance 3.5 3.5 pf c pd power dissipation capacitance per switch notes 1 and 2 9 9 pf c s switch capacitance 8 8 pf
2004 may 19 3 philips semiconductors product speci?cation bilateral switches 74hc2g66; 74hct2g66 function table see note 1. note 1. h = high voltage level; l = low voltage level. ordering information pinning input ne switch l off hon type number package temperature range pins package material outline version marking 74hc2g66dp - 40 c to +125 c 8 tssop8 plastic sot505-2 h66 74HCT2G66DP - 40 c to +125 c 8 tssop8 plastic sot505-2 t66 pin symbol description 1 1y independent input or output 2 1z independent input or output 3 2e enable input (active high) 4 gnd ground (0 v) 5 2y independent input or output 6 2z independent input or output 7 1e enable input (active high) 8v cc supply voltage handbook, halfpage 66 mnb002 1 2 3 4 1y 1z 2e gnd v cc 1e 2z 2y 8 7 6 5 fig.1 pin configuration. mnb003 handbook, halfpage 1y 1e 2z 1z 2y 2e fig.2 logic symbol.
2004 may 19 4 philips semiconductors product speci?cation bilateral switches 74hc2g66; 74hct2g66 mnb004 handbook, halfpage 2 1 1 1 1 x1 6 5 7# 1 x1 # 3 fig.3 iec logic symbol. handbook, halfpage mnb005 gnd nz ny ne fig.4 logic diagram. recommended operating conditions limiting values in accordance with the absolute maximum rating system (iec 60134); voltages are referenced to gnd (ground = 0 v). notes 1. the input and output voltage ratings may be exceeded if the input and output current ratings are observed. 2. above 55 c the value of p tot derates linearly with 2.5 mw/k. symbol parameter conditions 74hc2g66 74hct2g66 unit min. typ. max. min. typ. max. v cc supply voltage 2.0 5.0 10.0 4.5 5.0 5.5 v v i input voltage 0 - v cc 0 - v cc v v o output voltage 0 - v cc 0 - v cc v t amb ambient temperature see dc and ac characteristics per device - 40 +25 +125 - 40 +25 +125 c t r ,t f input rise and fall times v cc = 2.0 v -- 1000 --- ns v cc = 4.5 v - 6.0 500 - 6.0 500 ns v cc = 6.0 v -- 400 --- ns v cc = 9.0 v -- 250 --- ns symbol parameter conditions min. max. unit v cc supply voltage - 0.5 +11.0 v i ik input diode current v i < - 0.5 v or v i >v cc + 0.5 v; note 1 - 20 ma i ok output diode current v o < - 0.5 v or v o >v cc + 0.5 v; note 1 - 20 ma i o output source or sink current - 0.5v 2004 may 19 5 philips semiconductors product speci?cation bilateral switches 74hc2g66; 74hct2g66 dc characteristics type 74hc2g66 at recommended operating conditions; voltages are referenced to gnd (ground = 0 v). symbol parameter test conditions min. typ. max. unit other v cc (v) t amb = - 40 c to +85 c; note1 v ih high-level input voltage 2.0 1.5 1.2 - v 4.5 3.15 2.4 - v 6.0 4.2 3.2 - v 9.0 6.3 4.7 - v v il low-level input voltage 2.0 - 0.8 0.5 v 4.5 - 2.1 1.35 v 6.0 - 2.8 1.8 v 9.0 - 4.3 2.7 v i li input leakage current v i =v cc or gnd 6.0 -- 0.1 m a 9.0 -- 0.2 m a i s(off) analog switch current, off-state v i =v ih or v il ; ? v s ? =v cc - gnd; see fig.7 9.0 - 0.1 1.0 m a i s(on) analog switch current, on-state v i =v ih or v il ; ? v s ? =v cc - gnd; see fig.8 9.0 - 0.1 1.0 m a i cc quiescent supply current v i =v cc or gnd; v is = gnd or v cc ; v os =v cc or gnd 6.0 -- 10 m a 9.0 -- 20 m a
2004 may 19 6 philips semiconductors product speci?cation bilateral switches 74hc2g66; 74hct2g66 note 1. all typical values are measured at t amb =25 c. t amb = - 40 c to +125 c v ih high-level input voltage 2.0 1.5 -- v 4.5 3.15 -- v 6.0 4.2 -- v 9.0 6.3 -- v v il low-level input voltage 2.0 -- 0.5 v 4.5 -- 1.35 v 6.0 -- 1.8 v 9.0 -- 2.7 v i li input leakage current v i =v cc or gnd 6.0 -- 0.1 m a 9.0 -- 0.2 m a i s(off) analog switch current, off-state v i =v ih or v il ; ? v s ? =v cc - gnd; see fig.7 9.0 -- 1.0 m a i s(on) analog switch current, on-state v i =v ih or v il ; ? v s ? =v cc - gnd; see fig.8 9.0 -- 1.0 m a i cc quiescent supply current v i =v cc or gnd; v is = gnd or v cc ; v os =v cc or gnd 6.0 -- 20 m a 9.0 -- 40 m a symbol parameter test conditions min. typ. max. unit other v cc (v)
2004 may 19 7 philips semiconductors product speci?cation bilateral switches 74hc2g66; 74hct2g66 type 74hct2g66 at recommended operating conditions; voltages are referenced to gnd (ground = 0 v). note 1. all typical values are measured at t amb =25 c. symbol parameter test conditions min. typ. max. unit other v cc (v) t amb = - 40 c to +85 c; note 1 v ih high-level input voltage 4.5 to 5.5 2.0 1.6 - v v il low-level input voltage 4.5 to 5.5 - 1.2 0.8 v i li input leakage current v i =v cc or gnd 5.5 -- 1.0 m a i s(off) analog switch current, off-state v i =v ih or v il ; ? v s ? =v cc - gnd; see fig.7 - 0.1 1.0 m a i s(on) analog switch current, on-state v i =v ih or v il ; ? v s ? =v cc - gnd; see fig.8 - 0.1 1.0 m a i cc quiescent supply current v i =v cc or gnd; v is = gnd or v cc ; v os =v cc or gnd 4.5 to 5.5 -- 10 m a d i cc additional supply current per input v i =v cc - 2.1 v; i o =0a 4.5 to 5.5 -- 375 m a t amb = - 40 c to +125 c v ih high-level input voltage 4.5 to 5.5 2.0 -- v v il low-level input voltage 4.5 to 5.5 -- 0.8 v i li input leakage current v i =v cc or gnd 5.5 -- 1.0 m a i s(off) analog switch current, off-state v i =v ih or v il ; ? v s ? =v cc - gnd; see fig.7 -- 1.0 m a i s(on) analog switch current, on-state v i =v ih or v il ; ? v s ? =v cc - gnd; see fig.8 -- 1.0 m a i cc quiescent supply current v i =v cc or gnd; v is = gnd or v cc ; v os =v cc or gnd 4.5 to 5.5 -- 20 m a d i cc additional supply current per input v i =v cc - 2.1 v; i o =0a 4.5 to 5.5 -- 410 m a
2004 may 19 8 philips semiconductors product speci?cation bilateral switches 74hc2g66; 74hct2g66 resistance r on for 74hc2g66 and 74hct2g66 see notes 1 and 2. notes 1. for 74 hct2g66 only v cc = 4.5 v applies; for 74hc2g66 all v cc values apply. 2. at supply voltages near 2 v, the analog switch on-resistance is extremely non linear. when using a supply of 2 v, it is recommended is to use these devices only for digital signals. 3. all typical values are measured at t amb =25 c. symbol parameter test conditions min. typ. max. unit other v cc (v) i s ( m a) t amb = - 40 c to +85 c; note 3 r on(peak) on-resistance (peak) v is =v cc to gnd; v i =v ih or v il ; see figs 5 and 6 2.0 100 - 250 -w 4.5 1000 - 41 118 w 6.0 1000 - 30 105 w 9.0 1000 - 21 88 w r on(rail) on-resistance (rail) v is = gnd; v i =v ih or v il ; see figs 5 and 6 2.0 100 - 65 -w 4.5 1000 - 28 95 w 6.0 1000 - 22 82 w 9.0 1000 - 18 70 w v is =v cc ; v i =v ih or v il ; see figs 5 and 6 2.0 100 - 65 -w 4.5 1000 - 31 106 w 6.0 1000 - 23 94 w 9.0 1000 - 19 78 w d r on maximum variation of on-resistance between the two channels v is =v cc to gnd; v i =v ih or v il ; see figs 5 and 6 4.5 -- 5 -w 6.0 -- 4 -w 9.0 -- 3 -w t amb = - 40 c to +125 c r on(peak) on-resistance (peak) v is =v cc to gnd; v i =v ih or v il ; see figs 5 and 6 2.0 100 ---w 4.5 1000 -- 142 w 6.0 1000 -- 126 w 9.0 1000 -- 105 w r on(rail) on-resistance (rail) v is = gnd; v i =v ih or v il ; see figs 5 and 6 2.0 100 ---w 4.5 1000 -- 115 w 6.0 1000 -- 100 w 9.0 1000 -- 80 w v is =v cc ; v i =v ih or v il ; see figs 5 and 6 2.0 100 ---w 4.5 1000 -- 128 w 6.0 1000 -- 113 w 9.0 1000 -- 95 w
2004 may 19 9 philips semiconductors product speci?cation bilateral switches 74hc2g66; 74hct2g66 fig.5 test circuit for measuring on-resistance (r on ). mna078 v yz i is v is = 0 to v cc - gnd high (from enable inputs) gnd handbook, halfpage 02 10 60 40 10 0 20 46 8 mnb006 r on ( w ) v is (v) v cc = 4.5 v v cc = 6.0 v v cc = 9.0 v fig.6 typical on-resistance (r on ) as function of input voltage (v is ). v is =0vtov cc . mna079 aa yz v i = v cc or gnd v o = gnd or v cc low (from enable input) gnd fig.7 test circuit for measuring off-state current. mna080 aa yz v i = v cc or gnd v o (open circuit) high (from enable input) gnd fig.8 test circuit for measuring on-state current.
2004 may 19 10 philips semiconductors product speci?cation bilateral switches 74hc2g66; 74hct2g66 ac characteristics type 74hc2g66 gnd = 0 v; t r =t f = 6.0 ns; v is is the input voltage at pins ny or nz, whichever is assigned as an input; v os is the output voltage at pins ny or nz, whichever is assigned as an output. note 1. all typical values are measured at t amb =25 c. symbol parameter test conditions min. typ. max. unit waveforms v cc (v) t amb = - 40 c to +85 c; note 1 t phl /t plh propagation delay v is to v os r l = ; see figs 16 and 18 2.0 - 6.5 65 ns 4.5 - 2.0 13 ns 6.0 - 1.5 11 ns 9.0 - 1.2 10 ns t pzh /t pzl turn-on time ne to v os r l =1k w ; see figs 17 and 18 2.0 - 40 125 ns 4.5 - 12 25 ns 6.0 - 10 21 ns 9.0 - 716ns t phz /t plz turn-off time ne to v os r l =1k w ; see figs 17 and 18 2.0 - 21 145 ns 4.5 - 12 29 ns 6.0 - 11 28 ns 9.0 - 10 23 ns t amb = - 40 c to +125 c t phl /t plh propagation delay v is to v os r l = ; see figs 16 and 18 2.0 -- 80 ns 4.5 -- 15 ns 6.0 -- 14 ns 9.0 -- 12 ns t pzh /t pzl turn-on time ne to v os r l =1k w ; see figs 17 and 18 2.0 -- 150 ns 4.5 -- 30 ns 6.0 -- 26 ns 9.0 -- 20 ns t phz /t plz turn-off time ne to v os r l =1k w ; see figs 17 and 18 2.0 -- 175 ns 4.5 -- 35 ns 6.0 -- 33 ns 9.0 -- 27 ns
2004 may 19 11 philips semiconductors product speci?cation bilateral switches 74hc2g66; 74hct2g66 type 74hct2g66 gnd = 0 v; t r =t f = 6.0 ns; v is is the input voltage at pins ny or nz, whichever is assigned as an input; v os is the output voltage at pins ny or nz, whichever is assigned as an output. note 1. all typical values are measured at t amb =25 c. symbol parameter test conditions min. typ. max. unit waveforms v cc (v) t amb = - 40 c to +85 c; note 1 t phl /t plh propagation delay v is to v os r l = ; see figs 16 and 18 4.5 - 2.0 15 ns t pzh /t pzl turn-on time ne to v os r l =1k w ; see figs 17 and 18 4.5 - 13 30 ns t phz /t plz turn-off time ne to v os r l =1k w ; see figs 17 and 18 4.5 - 13 44 ns t amb = - 40 c to +125 c t phl /t plh propagation delay v is to v os r l = ; see figs 16 and 18 4.5 -- 18 ns t pzh /t pzl turn-on time ne to v os r l =1k w ; see figs 17 and 18 4.5 -- 36 ns t phz /t plz turn-off time ne to v os r l =1k w ; see figs 17 and 18 4.5 -- 53 ns
2004 may 19 12 philips semiconductors product speci?cation bilateral switches 74hc2g66; 74hct2g66 type 74hc2g66 and 74hct2g66 at recommended conditions and typical values; gnd = 0 v; t r =t f = 6.0 ns; v is is the input voltage at pins ny or nz, whichever is assigned as an input; v os is the output voltage at pins ny or nz, whichever is assigned as an output. notes 1. adjust input voltage v is is 0 dbm level (0 db m = 1 mw into 600 w ). 2. adjust input voltage v is is 0 dbm level at v os for 1 mhz (0 db m = 1 mw into 50 w ). symbol parameter test conditions typ. unit other v is(p-p) (v) v cc (v) d sin sine-wave distortion f = 1 khz; r l =10k w ; c l = 50 pf; see fig.14 4.0 4.5 0.04 % 8.0 9.0 0.02 % f = 10 khz; r l =10k w ; c l = 50 pf; see fig.14 4.0 4.5 0.12 % 8.0 9.0 0.06 % a off(feedthru) switch off signal feed-through r l = 600 w ; c l = 50 pf; f = 1 mhz; see figs 9 and 15 note 1 4.5 - 50 db 9.0 - 50 db a ct(s) crosstalk between the two switches r l = 600 w ; c l = 50 pf; f = 1 mhz; see fig 11 note 1 4.5 - 60 db 9.0 - 60 db v ct(e-s)(p-p) crosstalk voltage between enable input to the switches (peak-to-peak value) r l = 600 w ; c l = 50 pf; f = 1 mhz (ne, square wave between v cc and gnd, t r =t f = 6.0 ns); see fig 12 note 1 4.5 110 mv 9.0 220 mv f max frequency response ( - 3 db) r l =50 w ; c l = 10 pf; see figs 10 and 13 note 2 4.5 180 mhz 9.0 200 mhz c s switch capacitance 8 pf
2004 may 19 13 philips semiconductors product speci?cation bilateral switches 74hc2g66; 74hct2g66 fig.9 typical switch off signal feed-through as a function of frequency. handbook, full pagewidth 0 - 20 - 40 - 60 - 80 - 100 mna082 10 10 2 10 3 10 4 10 5 10 6 f (khz) (db) test conditions: v cc = 4.5 v; gnd = 0 v; r l =50 w ; r source =1k w . handbook, full pagewidth 5 0 - 5 mna083 10 10 2 10 3 10 4 10 5 10 6 f (khz) (db) fig.10 typical frequency response. test conditions: v cc = 4.5 v; gnd = 0 v; r l =50 w ; r source =1k w .
2004 may 19 14 philips semiconductors product speci?cation bilateral switches 74hc2g66; 74hct2g66 handbook, halfpage mnb009 2r l 2r l r l 0.1 m f nz/ny ny/nz channel on c l v cc gnd v is fig.11 test circuit for measuring crosstalk between any two switches. handbook, halfpage mnb010 2r l 2r l 2r l 2r l nz/ny ny/nz channel off c l v cc v cc gnd v os db a. channel on condition. b. channel off condition. handbook, full pagewidth dut mnb011 2r l 2r l 2r l 2r l nz/ny ny/nz c l oscilloscope v cc ne v cc v cc gnd gnd handbook, halfpage mnb012 v(p - p) fig.12 test circuit for measuring crosstalk between control and any switch. the crosstalk is defined as follows (oscilloscope output):
2004 may 19 15 philips semiconductors product speci?cation bilateral switches 74hc2g66; 74hct2g66 fig.13 test circuit for measuring minimum frequency response. handbook, full pagewidth mna084 0.1 m f 2r l 2r l v os v cc v is c l db z/y y/z gnd channel on sine-wave adjust input voltage to obtain 0 dbm at v os when f i = 1 mhz. after set-up, frequency of f i is increased to obtain a reading of - 3 db at v os . fig.14 test circuit for measuring sine-wave distortion. handbook, full pagewidth mna085 10 m f 2r l 2r l v os v cc v is c l distortion meter z/y y/z gnd f in = 1 khz sine-wave channel on fig.15 test circuit for measuring switch off signal feed-through. handbook, full pagewidth mna086 0.1 m f 2r l 2r l v os v cc v is c l db z/y y/z gnd channel off
2004 may 19 16 philips semiconductors product speci?cation bilateral switches 74hc2g66; 74hct2g66 ac waveforms handbook, halfpage mnb007 t plh t phl v m v m v is v os gnd v i v oh v ol fig.16 waveforms showing input (v is ) to output (v os ) propagation delay and the output transition time. 74hc2g66: v m = 50%; v i = gnd to v cc . 74hct2g66: v m = 1.3 v; v i = gnd to 3.0 v. handbook, full pagewidth mnb008 t plz t phz switch disabled switch enabled v y v x switch enabled output low-to-off off-to-low output high-to-off off-to-high ne ny or nz ny or nz v ol v oh v cc v i v m gnd gnd t pzl t pzh v m v m fig.17 waveforms showing turn-on and turn-off times. v x = 10% of signal amplitude. v y = 90% of signal amplitude. 74hc2g66: v m = 50%; v i = gnd to v cc . 74hct2g66: v m = 1.3 v; v i = gnd to 3.0 v.
2004 may 19 17 philips semiconductors product speci?cation bilateral switches 74hc2g66; 74hct2g66 handbook, full pagewidth open gnd 50 pf v cc v cc v i v o mna742 d.u.t. c l = r t r l = 1 k w pulse generator s1 handbook, full pagewidth mna089 t thl (t f )t tlh (t r ) v m t w positive input pulse negative input pulse 0 v amplitude 90% 10% t tlh (t r )t thl (t f ) v m t w 0 v amplitude 90% 10% fig.18 load circuitry for switching times. definitions for test circuit: r l = load resistor. c l = load capacitance including jig and probe capacitance. r t = termination resistance should be equal to the output impedance z o of the pulse generator. test s1 t plh /t phl open t plz /t pzl v cc t phz /t pzh gnd input pulse definition: t r =t f = 6 ns, when measuring f max , there is no constraint on t r , t f with 50% duty factor. 74hc2g66: v m = 50%; v i = gnd to v cc . 74hct2g66: v m = 1.3 v; v i = gnd to 3.0 v.
2004 may 19 18 philips semiconductors product speci?cation bilateral switches 74hc2g66; 74hct2g66 package outline unit a 1 a max. a 2 a 3 b p l h e l p wy v ce d (1) e (1) z (1) q references outline version european projection issue date iec jedec jeita mm 0.15 0.00 0.95 0.75 0.38 0.22 0.18 0.08 3.1 2.9 3.1 2.9 0.65 4.1 3.9 0.70 0.35 8 0 0.13 0.1 0.2 0.5 dimensions (mm are the original dimensions) note 1. plastic or metal protrusions of 0.15 mm maximum per side are not included. 0.47 0.33 sot505-2 - - - 02-01-16 w m b p d z e 0.25 14 8 5 q a 2 a 1 l p (a 3 ) detail x a l h e e c v m a x a y 2.5 5 mm 0 scale tssop8: plastic thin shrink small outline package; 8 leads; body width 3 mm; lead length 0.5 mm sot505-2 1.1 pin 1 index
2004 may 19 19 philips semiconductors product speci?cation bilateral switches 74hc2g66; 74hct2g66 data sheet status notes 1. please consult the most recently issued data sheet before initiating or completing a design. 2. the product status of the device(s) described in this data sheet may have changed since this data sheet was published. the latest information is available on the internet at url http://www.semiconductors.philips.com. 3. for data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. level data sheet status (1) product status (2)(3) definition i objective data development this data sheet contains data from the objective speci?cation for product development. philips semiconductors reserves the right to change the speci?cation in any manner without notice. ii preliminary data quali?cation this data sheet contains data from the preliminary speci?cation. supplementary data will be published at a later date. philips semiconductors reserves the right to change the speci?cation without notice, in order to improve the design and supply the best possible product. iii product data production this data sheet contains data from the product speci?cation. philips semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. relevant changes will be communicated via a customer product/process change noti?cation (cpcn). definitions short-form specification ? the data in a short-form specification is extracted from a full data sheet with the same type number and title. for detailed information see the relevant data sheet or data handbook. limiting values definition ? limiting values given are in accordance with the absolute maximum rating system (iec 60134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the specification is not implied. exposure to limiting values for extended periods may affect device reliability. application information ? applications that are described herein for any of these products are for illustrative purposes only. philips semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. disclaimers life support applications ? these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips semiconductors for any damages resulting from such application. right to make changes ? philips semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. when the product is in full production (status production), relevant changes will be communicated via a customer product/process change notification (cpcn). philips semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
? koninklijke philips electronics n.v. 2004 sca76 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owne r. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not con vey nor imply any license under patent- or other industrial or intellectual property rights. philips semiconductors C a worldwide company contact information for additional information please visit http://www.semiconductors.philips.com . fax: +31 40 27 24825 for sales of?ces addresses send e-mail to: sales.addresses@www.semiconductors.philips.com . printed in the netherlands r44/04/pp 20 date of release: 2004 may 19 document order number: 9397 750 13255

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